Titanium Silicide

Titanium Silicide TiSi2 sputtering target is a compound target composed of titanium and silicon, mainly used in semiconductor, integrated circuit and other fields, through the sputtering process to deposit TiSi₂ thin film used to reduce the contact resistance, improve the performance of the device and so on many aspects.

We supply Titanium Silicide TiSi2 sputtering targets, VIMATERIAL can also provide target binding service, our products are subject to customisation and experimentation, please contact us if you need.

Characteristics

Molecular Formula: TiSi₂

Molecular weight: 104.04

Appearance: Usually grey or black solid

Density: about 4.39 g/cm³.

Melting point: about 1540°C

Crystal structure: It has two crystal structures, C49 (low temperature phase) and C54 (high temperature phase), the C49 structure is a substable phase, and the C54 structure is a thermodynamically stable phase, and it can be transformed from the C49 phase to the C54 phase under suitable temperature treatment, and the transformation of this crystal structure has an important effect on its electrical and other properties.

Applications

Semiconductor field:Titanium Silicide TiSi2 sputtering targets are used in semiconductor manufacturing to form a silicide layer during the metallisation process of the chip, which effectively reduces the contact resistance between the source, drain and silicon and improves the chip performance.

Integrated Circuits: In integrated circuits, the TiSi₂ film formed by sputtering the target can be used as part of the interconnecting wires, which improves the conductivity of the circuit and the speed of the signal transmission, and enhances the integration and operational efficiency of the integrated circuits.

Photovoltaic field: Titanium Silicide TiSi2 sputtering target used in the preparation of electrode materials for photovoltaic cells, it can enhance the electrical contact between the electrode and the semiconductor material and improve the photoelectric conversion efficiency of the cell.

Micro Electro Mechanical Systems (MEMS) field: In MEMS device fabrication, TiSi₂ sputtered thin films can be used as structural or conductive materials to help build micro- and nano-sized mechanical and electronic components, which support miniaturisation and high performance of MEMS devices.

Quality Control

Our products are subject to a strict quality management system. There are strict inspection standards for incoming materials, processing, final inspection and factory inspection. Strict isolation measures are taken for unqualified processing to prevent unqualified products from flowing into the next process. Samples are provided for customer re-inspection according to customer requirements.

Packaging and Storage

Titanium Silicide TiSi2 sputtering targets are packed in double-layer vacuum bags and then boxed, and packed in cartons outside.

Titanium Silicide TiSi₂ sputtering targets should be stored in a dry, clean, well-ventilated environment with relatively stable temperature and humidity, avoiding moisture, oxidation and physical collision, pollution, and at the same time be isolated from other substances that may have a chemical reaction, in order to keep its performance and quality from being damaged.