Zirconium Silicide

Zirconium Silicide sputtering targets are high-purity, high-density, chemically stable materials with compatible crystal structures, which are prepared by a variety of methods and are widely used in the fields of semiconductors, electronic devices, optics and coatings.

Characterization

Density: Its density is generally around 4.8-5.5g/cm³.

Melting point: The melting point of zirconium silicide is high, about 1500℃-1550℃.

Hardness: Mohs hardness is about 7-8, with good wear resistance.

Crystal structure: It has a specific crystal structure, such as the cubic crystal system, and the crystal structure is complete, which is conducive to ensuring the quality and performance of sputtered films.

Thermal expansion coefficient: In the temperature range of 20℃-1000℃, its thermal expansion coefficient is about 6×10-⁶/℃-8×10-⁶/℃, which is more compatible with the coefficient of thermal expansion of some substrate materials, and it can reduce the stress of the thin film in the process of preparation and use.

Resistivity: Resistivity is generally in the range of 10-⁴Ω・cm-10-³Ω・cm, which meets different conductive performance needs when applied in the electrical field.

Sputtering Threshold: The sputtering threshold is relatively low, usually between 10-20eV, which means that the target atoms can be effectively sputtered out at low sputtering energy, which is conducive to improving sputtering efficiency and reducing energy consumption.

Deposition rate: Under conventional sputtering conditions, the deposition rate is generally in the range of 10-50 nm/min, depending on the sputtering power, the working air pressure, the distance between the target and the substrate and other factors.

Applications

Semiconductor field: used in the manufacture of semiconductor devices in the insulating layer, barrier layer, metal gate and so on. Zirconium silicide film has the characteristics of high dielectric constant and low leakage current, which can effectively improve the performance and reliability of semiconductor devices, reduce power consumption and improve the integration degree.

Electronic device field: in the manufacture of integrated circuits, thin-film transistors, liquid crystal displays and other electronic devices, as electrode materials, wiring materials, contact materials and so on. Zirconium silicide sputtering target can be prepared with good conductivity, stability and adhesion of the film to meet the demand for high-performance materials for electronic devices.

Optical field: it can be used to prepare optical films, such as transmittance enhancement film, reflective film, light filtering film and so on. Zirconium silicide films have suitable refractive index and extinction coefficient, which can effectively regulate the propagation and reflection of light and improve the performance of optical components, and are widely used in the fields of optical instruments, optical communications, solar photovoltaic and so on.

Coating field: As a high-performance coating material, zirconium silicide sputtering target can be used to prepare wear-resistant, corrosion-resistant and high-temperature-resistant coatings to improve the surface properties and service life of materials. For example, zirconium silicide coatings prepared on the surface of cutting tools, molds, aerospace parts, etc. can significantly improve their hardness, wear resistance and oxidation resistance.