Zinc Telluride

Zinc telluride (ZnTe) target is an important semiconductor material target.

Basic information:

Chemical formula: ZnTe, composed of two elements: zinc (Zn) and tellurium (Te).

Appearance: Usually appears as a reddish brown crystalline solid.

Density: The theoretical density is about 6.34 g/cm³.

Melting point: 1238.5℃.

Crystal structure: cubic sphalerite structure, similar to common semiconductor materials such as zinc sulfide, zinc selenide and so on. This crystal structure gives zinc telluride unique electrical and optical properties.

Preparation method:

Powder metallurgy method: high purity zinc powder and tellurium powder are mixed according to a certain proportion, after grinding, drying and other treatment, sintered under high temperature and high pressure to obtain zinc telluride target.

Vacuum melting method: In a vacuum environment, zinc and tellurium are heated above the melting point, so that they are melted and fully mixed, and then cooled and solidified to obtain zinc telluride ingots, and then the ingots are processed into targets.

Application field:

Semiconductor field: Zinc telluride is a wide band gap semiconductor material with a band gap of about 2.26 eV, which has a wide range of applications in semiconductor devices.

Solar cell field: can be used as the absorption layer material or buffer layer material of thin film solar cells, which can improve the photoelectric conversion efficiency of solar cells.

Optical field: Due to its special optical properties, it can be used to prepare optical coatings, optical filters, infrared detectors and other optical devices.