Yttrium Silicide

Yttrium Silicide sputtering target is a kind of sputtering target with chemical formula YSi₂ and gray or black color. It has high melting point, high hardness, good chemical stability, excellent electrical conductivity and thermal conductivity, and other physicochemical properties, which has important applications in semiconductors, electronic devices, optoelectronics and other fields.

Characteristics

Chemical formula: YSi₂.

Appearance: usually gray or black.

High melting point: It has a high melting point, generally above 2000℃, which makes it able to maintain a stable solid state in a high temperature sputtering environment, and is not easy to melt or deform, which is conducive to ensuring the uniformity and stability of the sputtering coating process.

High hardness: Higher hardness can effectively resist the bombardment of sputtering ions and reduce the abrasion of the target surface and particle spattering, thus prolonging the service life of the target, and also help to improve the hardness and abrasion resistance of the prepared film.

Good chemical stability: at room temperature, it has good resistance to most acids, alkalis and other chemicals, and is not easy to have chemical reactions. During the sputtering process, even in a vacuum environment and the possible presence of a small amount of reactive gases, the chemical stability can be maintained, reducing the risk of film contamination or performance degradation, to ensure the purity and performance of the prepared film.

Excellent electrical and thermal conductivity: Good electrical conductivity is conducive to better control of ion bombardment and film deposition rate during sputtering, thereby improving film quality and uniformity. Excellent thermal conductivity can quickly dissipate the heat generated during the sputtering process, preventing the target from overheating locally, and ensuring the stability of the sputtering process and target properties.

Applications

Semiconductor industry: In semiconductor integrated circuit manufacturing, Yttrium Silicide sputtering target can be used for the preparation of metal silicide film as ohmic contact or interconnect material, which can effectively reduce the contact resistance, improve the performance and reliability of the device, and is of great significance for reducing the chip size and improving the integration degree.

Electronic device field: it can be used to manufacture electrode materials and blocking layer materials for electronic devices. For example, in thin-film transistor (TFT), Yttrium Silicide film can be used as the electrode material of source, drain or gate to improve the electrical performance and stability of the device; in metal-insulator-metal (MIM) capacitor, it is used as the material of the barrier layer to improve the insulating performance and voltage resistance of the capacitor.

Optoelectronics: In the manufacture of optoelectronic devices such as light-emitting diodes (LEDs), laser diodes (LDs), etc., Yttrium Silicide sputtering targets can be used for the preparation of ohmic contact layers or reflective layers to improve the optical efficiency and performance stability of optoelectronic devices. In addition, in the preparation of optical films, they can also be used as doping materials or functional layer materials to give optical films special optical properties.

Other fields: It can also be applied to the preparation of thin films in the fields of wear-resistant materials and high-temperature corrosion-resistant materials. By sputtering Yttrium Silicide on the surface of the material, the surface hardness, wear resistance and high temperature oxidation resistance of the material can be improved, extending the service life of the material and expanding the scope of application in harsh environments.