Tungsten Silicide

Tungsten Silicide granules are a grey-black, granular material with a high melting point and high hardness, which exhibits good thermal stability and electrical conductivity in terms of physical properties, is chemically stable, and plays an important role in microelectronics, high-temperature protection, lubrication, and many other fields.

Characteristics

Chemical formula and molecular weight: Tungsten Silicid mainly exists in the form of WSi₂, the molecular weight is 240.01.

Chemical stability: Tungsten Silicide has good chemical stability, but can react violently with strong acids, fluorine, oxidants and interhalogen compounds. Insoluble in water, soluble in fluorine aqua regia.

Density: relatively high density, about 9.4g/ml (different literature data may have some differences, there are reports that the density is 9.88g/cm³)

Melting point: high melting point, up to 2165 ℃ (some literature reported 2065 ℃ or about 2320 ℃, data differences may be related to the purity of the material and testing conditions and other factors)

Colour and morphology: usually grey-black, irregularly shaped particles.

Conductivity: Tungsten Silicide has a certain degree of electrical conductivity, in the field of microelectronics is often used as a tactile material as well as polysilicon line shunt, resistance is generally 60-80μΩ・cm.

Hardness: high hardness, which gives it an advantage in some application scenarios where material hardness is required.

Sensitivity: It is sensitive to humidity and needs to be protected from moisture during storage and use.

Applications

Microelectronic field:

As contact material: due to its certain conductivity and high melting point, hardness and other characteristics, it is suitable to be used as contact material in microelectronic devices, which can ensure stable work under higher current and temperature conditions, and ensure the normal operation of electronic equipment.

Splitter for polysilicon wires: it can increase the conductivity and signal speed of polysilicon wires, which helps to improve the performance and efficiency of integrated circuits. In the semiconductor manufacturing process, tungsten silicide particles can be used to prepare thin films that act as shunts on polysilicon wires to distribute and control the current.

Coating Materials:

Antioxidant coatings: tungsten silicide has good antioxidant properties and can be used to prepare antioxidant coverings to protect the substrate material from oxidative corrosion. For example, tungsten silicide coating on the surface of metal parts working in high-temperature environments can improve their antioxidant performance and extend their service life.

Resistance wire dressing: As a dressing material for resistance wires, it can provide stable resistance characteristics for resistance wires and maintain good stability under high temperature conditions.

High-temperature structural materials: In some occasions where the high-temperature performance of materials is required, such as aerospace and high-temperature furnaces, tungsten silicide particles can be used to prepare high-temperature structural components. Their high melting point and good thermal stability enable the parts made to maintain structural integrity and performance stability in high temperature environments.

Other applications: There is also potential for tungsten silicide particles to be used in some special functional materials. For example, as carriers or additives for catalysts, their special physicochemical properties are utilised to improve the activity and selectivity of catalysts; in the optical field, they may be used to prepare special optical coatings or materials to achieve specific optical properties.