Tungsten Silicide

Tungsten Silicide powder is a grey-black inorganic compound powder with high melting point, high hardness, good electrical conductivity and thermal stability, which can be used in microelectronics, high-temperature materials, coatings and other fields to enhance the material’s high-temperature resistance, abrasion resistance, electrical conductivity and other properties.

Properties

Appearance: Tungsten Silicide powder is usually a grey-black powder.

Density: approximately 9.3 – 9.4 g/cm³, relatively high density, which makes it advantageous in some applications where the density of the material is required, such as in the aerospace field as a high-temperature-resistant coating material, the higher density helps to increase the stability and durability of the coating.

Melting point: Up to 2160 – 2165°C, it is a high melting point material. The high melting point allows it to maintain a stable structure and properties at high temperatures, so it is commonly used in high temperature furnaces, rocket nozzles and other equipment and components that require high temperature resistance.

Particle size: The particle size of Tungsten Silicide powder can be customised according to the needs of different applications, and different particle size ranges such as nanoscale and microscale are common.

Solubility: insoluble in water, soluble in fluorine aqua regia, can react violently with strong acids, fluorine, oxidising agents and interhalogen compounds.

Antioxidant properties: Tungsten Silicide powder has good antioxidant properties, it can resist oxidation to a certain extent in air, but oxidation reactions may still occur at high temperatures or under specific oxidising conditions.

Electrical properties: Tungsten Silicide powder has a certain degree of electrical conductivity, resistance is usually 60 – 80 μΩ・cm, this property makes it in the field of microelectronics is often used as a tactile material as well as polysilicon line shunt, can increase the conductivity of polysilicon line and the speed of the signal.

Applications

Contact material: Tungsten Silicide has a resistance of 60-80 μΩ・cm, which makes it suitable for use as a contact material in microelectronic devices to ensure stable current transmission and normal operation of circuits.

Shunt for polysilicon wires: It can increase the conductivity and signal speed of polysilicon wires to improve the performance and efficiency of microelectronic devices. It can also be used as a barrier layer between silicon and other metals to prevent mutual diffusion and reaction between different metals, ensuring the stability and reliability of the device.

Thin film materials: can be prepared as thin films by chemical vapour deposition and other methods, and used to manufacture components in microelectromechanical systems (MEMS) such as microscale circuits.

High-temperature resistant coating: Tungsten Silicide has a high melting point (2160 – 2165°C) and good oxidation resistance, and can be used as a high-temperature resistant coating on high-temperature components such as high-temperature furnaces, rocket nozzles, and aviation engines, which can effectively resist high-temperature oxidation and corrosion, and prolong the service life of the components.

Heating element: It can be made into heating element such as resistance wire, which has good stability and reliability in high temperature environment and is suitable for high temperature heating equipment.

Lubricant field: Tungsten Silicide has a graphite-like layered structure with good lubricating properties, and can be used as a solid lubricant at high temperatures and high pressures, e.g., in aerospace, machining, and other fields to reduce friction and wear.

Catalyst field: It can be used as a catalyst carrier for the preparation of high-efficiency catalysts, such as photocatalysts and electrocatalysts, etc., which play a role in promoting the progress of the reaction and improving the efficiency of the reaction in chemical reactions.