Tin Selenide

SnSe targets are an important material for processes such as thin film deposition.

Basic Information

Chemical formula and composition: The chemical formula of SnSe indicates that it consists of tin (Sn) and selenium (Se) in a 1:1 atomic ratio.
Molecular weight: 197.67.
Appearance: Generally grey-black or black.
Crystal structure: It has an orthorhombic crystal structure.
Density: The density is approximately 6.14 g/cm³.
Melting point: The melting point is approximately 861°C. Near the melting point, the crystal structure and physical properties of SnSe change significantly.
Thermal conductivity: The low thermal conductivity of SnSe powders is a key advantage for thermoelectric applications.

Areas of Application

Semiconductor field: Tin Selenide Can be used to prepare semiconductor devices, such as field effect transistors, photodetectors and so on.

Solar Cells: As the absorber layer of solar cells,Tin Selenide has a high light absorption coefficient and a suitable band gap, which can effectively absorb sunlight and convert it into electricity.

Phase change storage field: SnSe can undergo phase change under certain temperature and pressure conditions, and its phase change characteristics make it potentially valuable in the phase change storage field. The superlattice thin film structure prepared by sputtering SnSe targets can be used for the preparation of phase change memory.