Tantalum Silicide

Tantalum silicide sputtering target is a material with tantalum silicide as the main component, which is in the form of solid plate or cylinder, with high purity, high melting point, good electrical conductivity and high-temperature stability, and it is a key material used for thin film preparation by physical vapour deposition technology in a variety of fields such as semiconductors, electronic devices and so on.

Characteristics

Composition: mainly composed of Tantalum (Ta) and Silicon (Si), the chemical molecular formula is generally TaSi₂.

Purity: Usually the purity can reach 99.5% and above, and some high-quality products can reach 99.9%. High purity is very important for the quality and stability of the film during the sputtering process, and can reduce the adverse effects of impurities on the electrical and optical properties of the film.

Density: The density is relatively high, generally around 8-10 g/cm³, but the exact value may vary slightly depending on the production process and the proportion of components. Higher density helps to improve the sputtering efficiency of the target and the deposition rate of the film.

Hardness: Tantalum silicide has a high hardness, which enables the target to better resist ion bombardment during the sputtering process and reduces the wear and deformation of the target, thus ensuring the stability of the sputtering process and the service life of the target.

Melting point: The melting point is high, generally above 2000℃. The high melting point ensures that the target can withstand the high temperature environment during the sputtering process, and it is not easy to melt or deform, which ensures the normal sputtering process.

Sputtering Rate: Under the right sputtering conditions, Tantalum Silicide sputtering targets have high sputtering rates and are able to rapidly deposit thin films on the substrate. The sputtering rate is influenced by factors such as sputtering power, gas pressure, and the distance between the target and the substrate.

Thin Film Uniformity: A uniform thin film can be formed on the substrate, and the uniformity of the film is critical to the performance of electronic and optical devices. The uniformity of the film ensures the consistency of the electrical and optical properties of the device.

Adhesion: The film formed by sputtering has good adhesion to the substrate and can be firmly attached to the substrate, and is not easy to come off. Good adhesion helps to improve the reliability and service life of the device.

Applications

Semiconductor field:

Diffusion barrier layer: In semiconductor manufacturing, it is used to form a diffusion barrier layer to prevent atoms between different materials from diffusing into each other, ensuring the performance and stability of semiconductor devices. For example, at the contact interface between metal and semiconductor, tantalum silicide film can prevent metal atoms from diffusing into the semiconductor, avoiding adverse effects on the electrical properties of the semiconductor.

Capacitor manufacturing: Tantalum silicide can be used to manufacture components such as electrodes for semiconductor capacitors. Tantalum silicide has good electrical conductivity and stability, which can meet the requirements of capacitors for electrode materials and help improve the performance and reliability of capacitors.

Integrated circuit interconnection: As an interconnection material in integrated circuits, it is used to connect different circuit components. Its low resistivity and good thermal stability can ensure the fast transmission of signals and the normal operation of circuits in high temperature environments.

Optical field:

Optical Coatings: Tantalum silicide can be used to prepare optical films such as anti-reflective films, transmission enhancement films etc. These optical films can be applied to optical lenses, optical instruments, displays and other equipment to improve their optical properties, such as increasing transmittance and reducing reflection.

Laser technology: In laser technology, tantalum silicide sputtering targets can be used to manufacture laser mirrors, laser gain media and other components, which play an important role in laser generation, transmission and amplification.

Electronic device field:

Flat-panel displays: In the manufacture of flat-panel displays, such as liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs), tantalum silicide sputtering targets can be used to prepare electrodes, thin-film transistors (TFTs) and other components to improve the resolution, contrast and response speed of the display.

Electronic connectors: Due to its good conductivity and wear resistance, it can be used to manufacture contact parts for electronic connectors to ensure reliable connection between electronic devices.

High temperature protection and corrosion resistance field:

High-temperature coatings: Components that operate in high-temperature environments, such as aero-engine blades and gas turbine blades, can be prepared with high-temperature protective coatings using tantalum silicide sputtering targets. These coatings can improve the high-temperature resistance of the components, reduce the damage caused by high-temperature oxidation and corrosion on the components, and extend the service life of the components.

Corrosion-resistant coatings: in some equipment used in corrosive environments, such as chemical equipment, marine engineering equipment, etc., tantalum silicide coatings can provide good corrosion resistance and protect the equipment from corrosive media.

Other fields:

Fine ceramics: Tantalum silicide is used as raw material powder for fine ceramics, which is used to improve the performance of ceramics, such as improving the hardness, abrasion resistance and high temperature resistance of ceramics.

Biomedical: It can be used to produce coatings for implants in the biomedical field, such as pacemakers, hip replacement parts, dental implants and so on. These coatings can improve the biocompatibility and durability of implants and reduce irritation and rejection of human tissues.