Catalogries

Chemical Name:
Silicon Germanium Alloy
Formula:
SiGe
Product No.:
143200
CAS No.:
EINECS No.:
Form:
Powder
HazMat:

MSDS

TDS

Product ID Formula Purity Dimension Quantity Price in € Inquiry
143200PD001 SiGe 99.999% -100 Mesh 50g 865.00 Inquire
143200PD002 SiGe 99.999% -100 Mesh 50g 865.00 Inquire
Product ID
143200PD001
Formula
SiGe
Purity
99.999%
Dimension
-100 Mesh
Quantity
50g
Price in €
865.00
Product ID
143200PD002
Formula
SiGe
Purity
99.999%
Dimension
-100 Mesh
Quantity
50g
Price in €
865.00

Silicon germanium alloy is a new type of semiconductor material, which is made of two materials, silicon and germanium, mixed in a certain ratio. Silicon germanium alloy has higher conductivity, lower resistivity and higher carrier mobility than pure silicon. These unique physical properties make silicon-germanium alloy widely used in the modern semiconductor industry.

Properties:

Bandgap Engineering:

By changing the ratio of silicon to germanium, the bandgap of the alloy can be customized to make it suitable for a range of electronic and optoelectronic applications.

The bandgap of Si is 1.12 eV and the bandgap of Ge is 0.66 eV.

Lattice Matching:

Si-Ge can be grown on silicon wafers with minimal strain, making it compatible with existing silicon-based technologies.

Thermal and Electrical Conductivity:

Dependent on the Ge content, it provides better thermal and electrical properties than pure silicon.

Carrier Mobility:

Compared with pure silicon, Si-Ge has higher hole and electron mobility, which improves device performance.

Application of silicon germanium in the semiconductor field:

1. High-performance transistors: Silicon germanium alloy transistors can achieve faster switching speeds at lower operating voltages due to their higher electron mobility, which is of great significance for improving the performance of integrated circuits and reducing power consumption. Therefore, silicon germanium transistors are widely used in high-speed processors, high-performance computing and other fields.

2. Optoelectronic devices: Silicon germanium alloy materials have good light absorption and emission properties in the infrared spectrum, making them ideal materials for making infrared detectors and light-emitting diodes. These optoelectronic devices play an important role in communications, night vision devices, thermal imaging and other aspects.

3. Thermoelectric devices: Silicon germanium alloy materials also have good thermoelectric properties, that is, they can directly convert thermal energy into electrical energy. This feature makes silicon germanium have potential application value in thermoelectric power generation, temperature sensing and other fields.

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QUALITY ASSURANCE

VI HALBLEITERMATERIAL GmbH (VIMATERIAL) employs a stringent quality assurance system to ensure the reliability of our product quality. Strict quality control is implemented throughout the entire production chain, and for defective products, we strictly enforce the principle of rework and redo. Each batch is released only after passing detailed specification tests.

Every batch of our materials is independently tested, and, if necessary, we send samples to certified companies for testing. We provide these documents and analysis certificates with the shipment to certify that our products meet the required standards.

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