Indium Phosphide

Indium phosphide sputtering targets are high-purity solid block materials made of indium phosphide, which are used to deposit high-quality thin films in the semiconductor field and have excellent electrical and optical properties.

VIMATERIAL specializes in the production of various indium compound products. Supports processing of incoming materials and has stock all year round.

Properties

Appearance: Silver grey solid at room temperature, single crystal is black cubic crystal.

Density: 4.81g/cm³

Melting point: 1062°C (1944°F; 1335K)

Lattice constant: a = 5.8687 Å

Refractive index: 3.1 in the infrared; 3.55 at 632.8 nm.

Hardness: Indium phosphide has a hardness of approximately 4100 N/mm², measured on the Knoop scale.

Chemical properties: Very slightly soluble in inorganic acids, hydrolysis produces phosphine.

What’s the application of indium phosphide sputtering target?

Indium phosphide aputtering target has a wide range of applications in semiconductor materials. It can be used to manufacture high-speed electronic devices, optoelectronic devices, microwave devices, etc. In particular, in optical fiber communication technology, indium phosphide sputtering target is an important material. Optical fiber communication technology is an important part of modern communication technology, and indium phosphide is an important part of optical fiber communication technology. Indium phosphide sputtering target can be used to manufacture optoelectronic devices such as photoelectric modulators, lasers, and detectors, which play a vital role in optical fiber communication technology.

What are the advantages of indium phosphide (InP) compared with gallium arsenide (GaAs)?

(1) Indium phosphide has the advantages of high electron peak drift velocity, high bandgap width, and high thermal conductivity. The direct transition band gap of InP is 1.34eV, which corresponds to the band with the smallest transmission loss in optical communication; the thermal conductivity is higher than GaAs, and the heat dissipation performance is better;

(2) Indium phosphide has more advantages than GaAs in device manufacturing. The high current peak-to-valley ratio of InP devices determines the high conversion efficiency of the device; the inertial energy time constant of InP is half that of GaAs, and the working efficiency limit is twice that of GaAs devices; InP devices have better noise characteristics;

(3) Indium phosphide (InP) as a substrate material has the following main applications. Optoelectronic devices, including light sources (LEDs) and detectors (APD avalanche photodetectors), are mainly used in optical fiber communication systems; integrated lasers, optical detectors and amplifiers, etc., are optoelectronic integrated circuits and are essential components of the new generation of 40Gb/s communication systems.

Quality control

Our products implement the most stringent quality management system. There are strict inspection standards for incoming materials, processes, final inspections, and factory inspections. Strict isolation measures will be adopted for unqualified processing to prevent unqualified products from flowing into the next process. Samples will be provided to customers according to customer requirements for re-inspection.

Packaging and storage

The inner part is wrapped with soft materials and vacuum packed, and the outer part is packed in carton/wooden box.

Indium phosphide sputtering target should be stored in a dry, ventilated environment, avoid direct sunlight, and stay away from corrosive substances such as acids and alkalis. If the storage environment humidity is high, a desiccant can be placed in the storage container.