Indium Nitride

Indium nitride powder is a black semiconductor material powder with hexagonal zinc oxide crystal structure, density of 6.81g/cm³ and melting point of about 1100°C. It has potential applications in the fields of optoelectronics, high-speed electronics, sensors, thin-film transistors and photovoltaics.

Characteristics

Appearance: Usually black or grey-black powder.

Chemical formula: InN

Molecular weight: about 128.8247 g/mol

Resistivity: It is a semiconductor material with a certain resistivity, and the specific value of its resistivity will be affected by the purity of the material, crystal structure, doping and other factors. Generally speaking, the resistivity of undoped indium nitride is relatively high, while its resistivity can be reduced by suitable doping to meet the needs of different electronic device applications.

Reactivity: Slow oxidation to oxides when heated in air. It will react with hot concentrated acids and bases, for example, it will be corroded by sodium hydroxide solution, potassium hydroxide solution, etc. at high temperature.

Stability: It has certain stability under normal temperature and pressure, but its stability will be affected under some specific conditions, such as high temperature, strong acid and strong alkali. During storage and use, care needs to be taken to avoid contact with these conditions to maintain its stability.

Applications

Optoelectronics field:

Light Emitting Diodes (LEDs): They can be used to manufacture light emitting diodes, which are capable of emitting light in the ultraviolet and visible light ranges due to their unique energy band structure and have high luminous efficacy and colour purity, which is of great significance in achieving high-performance solid state lighting.

Laser diodes: In laser diodes, which can be used as active materials for laser emission, their high electron mobility and direct bandgap characteristics help to generate high-quality laser beams, which can be used in optical communications, laser processing, medical treatment and other fields.

Solar cells: It has potential application value in solar cells. Its suitable energy band structure can absorb specific wavelengths of sunlight and convert light energy into electricity, especially in new solar cell structures such as stacked solar cells, indium nitride can be used as a high-efficiency absorber layer material to improve the conversion efficiency of solar cells.

UV detector: For UV detection, indium nitride has high responsiveness and sensitivity, and can quickly and accurately detect UV signals, which can be used in the manufacture of UV detectors in the fields of UV communication, environmental monitoring, and fire early warning.

Electronic device field:

High Electron Mobility Transistors (HEMTs) and Field Effect Transistors (FETs): Indium nitride’s high electron mobility makes it ideally suited for use in the manufacture of high-frequency, high-power electronic transistors. In these transistors, indium nitride is used as a semiconductor channel material to provide fast electron transfer channels, increasing the switching speed and operating frequency of the device, which can be used in high-speed communications, radar, satellite communications, and other fields.

Integrated circuits: With the continuous development of integrated circuit technology, the performance requirements for semiconductor materials are getting higher and higher. The excellent electrical properties of indium nitride make it expected to be used in future integrated circuits, such as as the active layer of logic circuits or interconnect materials to improve the integration and performance of integrated circuits.

Sensor field:

Gas sensors: Indium nitride has a high sensitivity to certain gases and is able to interact with specific gases and change their electrical properties. Therefore, indium nitride powder can be used to prepare gas sensors for detecting the concentration and composition of gases such as oxygen, nitrogen, hydrogen, carbon monoxide, etc., which have important applications in environmental monitoring, industrial production, and automobile exhaust gas detection.

Pressure sensors: Indium nitride-based pressure sensors can respond to changes in external pressure through changes in their resistance or capacitance. With high sensitivity, fast response and good stability, such pressure sensors can be used for pressure measurement and control in industrial automation, robotics, medical devices and other fields.

Temperature sensors: The electrical properties of indium nitride change with temperature, a characteristic that allows it to be used in the manufacture of temperature sensors. With high precision and stability, indium nitride temperature sensors are able to work in harsh environments such as high and low temperatures, and can be used for temperature monitoring in aerospace, petrochemical, metallurgy and other fields.

Thin film technology field:

Transparent conductive film: indium nitride can be used as a transparent conductive material for the preparation of thin films with high transmittance in the visible light range and good conductivity at the same time. This transparent conductive film can be used in touch screens, liquid crystal displays, organic light-emitting diode (OLED) displays and other electronic display devices as electrode material or conductive layer.

Thin-film solar cells: In thin-film solar cells, indium nitride film can be used as an absorber or buffer layer material, combined with other semiconductor materials to improve the performance and stability of solar cells.

Materials research field: Scientists are using indium nitride powder for materials science research to explore its new physical properties and potential applications.