Indium Arsenide

Indium arsenide particles are grey, odourless, compound semiconductor particles with relatively high density (5.67g/ml), high electron mobility, which can be used in electronics, optical materials, catalysts and other fields, and are insoluble in water.

Characteristic

Appearance: grey particles, no smell.

Density: about 5.67g/ml in solid state, about 5.90g/cm³ in liquid state at melting point.

Melting point: 943°C.

Solubility: insoluble in water.

Electrical Properties: High electron mobility and mobility ratio (μe/μh = 70), low magnetoresistance effect and small resistance temperature coefficient, it is an ideal material for manufacturing Hall devices and magnetoresistive devices.

Optical properties: emission wavelength is 3.34μm.

Applications

Electronic device field:

Infrared detector: indium arsenide has a good response to infrared radiation and can be used to manufacture infrared detectors, which are widely used in military, security, aerospace and other fields of infrared thermal imaging, target detection and tracking. For example, in night monitoring, satellite remote sensing and other scenarios, indium arsenide infrared detectors can keenly capture the infrared signals emitted by objects to achieve target detection and identification.

High-speed transistors: Its higher electron mobility and other characteristics make it suitable for manufacturing high-speed, high-frequency transistors. These transistors play a key role in modern electronic equipment, can be used for high-speed data processing, communications equipment, etc., can improve the operating speed and performance of electronic equipment.

Terahertz oscillator: Indium arsenide is a promising material for terahertz oscillators. Terahertz technology has a broad application prospect in the fields of security check, biomedical imaging, communication, etc. Indium arsenide particles can be used for the preparation of terahertz oscillators, providing support for the development of terahertz technology.

Optical field:

Semiconductor laser: indium arsenide can be used as an important component of semiconductor lasers. Semiconductor lasers have the advantages of small size, high reliability, low energy consumption, current modulation, and high-speed laser output, etc. They are widely used in optical communications, optical storage, laser ranging, laser printing, laser processing, national defence and military industries, aerospace and other fields.

Light-emitting diode (LED): In some specific light-emitting diodes, indium arsenide can be used as a light-emitting material or participate in the construction of light-emitting layer, which is used to realise specific wavelengths of light emission to meet the needs of different optical applications.

Solar cell field: Indium arsenide has suitable energy band structure and photoelectric properties, which can be used for the preparation of solar cells, especially in some of the higher photoelectric conversion efficiency requirements, the spectral response has special requirements of the solar cell applications with potential value, help to improve the efficiency and performance of solar cells.

Catalysis field: In some chemical reactions, indium arsenide particles can be used as catalysts or carriers of catalysts. Although the application in this area is still in the research stage, preliminary studies show that it has certain catalytic activity in some specific chemical reactions, which may provide new ideas and materials for the future development of catalytic technology.