Product ID | Formula | Purity | Dimension | Quantity | Price in € | Inquiry |
---|---|---|---|---|---|---|
320800ST001 | GeO2 | 99.99% | Ø 25.4 mm x 3.175 mm | 1 | POR | Inquire |
320800ST002 | GeO2 | 99.99% | Ø 25.4 mm x 6.35 mm | 1 | POR | Inquire |
320800ST003 | GeO2 | 99.99% | Ø 50.8 mm x 3.175 mm | 1 | POR | Inquire |
320800ST004 | GeO2 | 99.99% | Ø 50.8 mm x 6.35 mm | 1 | POR | Inquire |
320800ST005 | GeO2 | 99.99% | Ø 76.2 mm x 3.175 mm | 1 | POR | Inquire |
320800ST006 | GeO2 | 99.99% | Ø 76.2 mm x 6.35 mm | 1 | POR | Inquire |
320800ST007 | GeO2 | 99.99% | Ø 101.6 mm x 3.175 mm | 1 | POR | Inquire |
320800ST008 | GeO2 | 99.99% | Ø 101.6 mm x 6.35 mm | 1 | POR | Inquire |
Germanium Oxide sputtering target is an important material with high purity, fine grain size, white powder or colorless crystals, prepared by melting and other processes, which can be applied to electronic devices, optical devices, optoelectronic devices and energy fields.
Properties
Appearance: Generally white powder or colorless crystal.
Density: about 6.239g/cm³.
Melting point: 1115℃.
Boiling point: 1200℃.
Refractive index: 1.99.
Application
Electronic devices: in the manufacture of semiconductor devices, can be used to deposit germanium oxide film, as an insulating layer, passivation layer or dielectric layer, etc., which helps to improve the performance and stability of the device, such as in the metal – oxide – semiconductor field effect transistor (MOSFET), can improve the interface characteristics and electrical properties of the device.
Optical devices: its optical properties make it suitable for the preparation of optical films, such as transmittance enhancement film, high refractive index film, etc., which can be used in optical lenses, displays, solar cells, etc., to improve the transmittance, refractive index and other properties of optical components, thereby enhancing the performance and efficiency of the optical system.
Optoelectronic devices: Germanium Oxide can be used in the manufacture of photodetectors, light-emitting diodes and other optoelectronic devices in the functional film, through the adjustment of the composition and structure of the film, to achieve the absorption of light, emission and detection and other functions, in the field of optical communications, optical displays, optical sensing and other areas have important application prospects.
Energy field: in lithium-ion batteries and other energy storage devices, can be used as part of the electrode material or electrode modification layer, to improve the interfacial properties of the electrode and electrochemical properties, to improve the charging and discharging efficiency of the battery and the cycle life; in addition, in solar cells, can also be used for the preparation of transparent conductive film or passivation layer, etc., to improve the photoelectric conversion efficiency of solar cells.
VI HALBLEITERMATERIAL GmbH (VIMATERIAL) employs a stringent quality assurance system to ensure the reliability of our product quality. Strict quality control is implemented throughout the entire production chain, and for defective products, we strictly enforce the principle of rework and redo. Each batch is released only after passing detailed specification tests.
Every batch of our materials is independently tested, and, if necessary, we send samples to certified companies for testing. We provide these documents and analysis certificates with the shipment to certify that our products meet the required standards.
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