Gallium Nitride

Gallium Nitride sputtering target is an important semiconductor material sputtering target with high purity, good crystalline properties, high hardness, high strength, high chemical stability, and wide bandwidth characteristics, which is widely used in optoelectronic devices, integrated circuits, communication fields, sensors, and so on, and is prepared by physical vapor deposition.

Characteristics

Chemical formula: GaN

Molecular weight: 83.73

Good crystalline properties: good crystal structure and crystallinity, uniform grain size and orientation, which is conducive to the formation of high-quality, uniform films during sputtering, thus improving the performance and consistency of semiconductor devices.

High hardness and strength: Gallium Nitride has high hardness, and the sputtering targets made of Gallium Nitride have high mechanical strength and wear resistance, which can withstand high-speed ion bombardment in the sputtering process, and are not easy to produce cracks and breakage, ensuring the stability of the sputtering process and the service life of the targets.

High chemical stability: Gallium Nitride has good chemical stability, and it is not easy to have chemical reaction with other substances under normal temperature and pressure, which makes the sputtering target have good stability during storage and use, and it is not easy to be affected by the external environment.

Wide bandwidth characteristics: Gallium nitride is a wide bandwidth semiconductor material, its bandwidth is 3.4 electron volts, can withstand higher operating voltage, can work at high temperature above 200 ℃, and at the same time has a high power density, low energy consumption, suitable for high frequency, wide bandwidth, etc., in the optoelectronic conversion of outstanding performance in the microwave signal transmission is very efficient, widely used in lighting, display and communication and other fields. It is widely used in lighting, display and communication.

Applications

Optoelectronic devices: In the manufacture of light-emitting diodes (LEDs), laser diodes (LDs) and other optoelectronic devices, Gallium Nitride sputtering targets are widely used in the preparation of active layers, limiting layers, ohmic contact layers and other key thin-film structures of the device, which can significantly improve the luminous efficiency, wavelength stability and reliability of the optoelectronic device, and promote the development of lighting technology and display technology.

Integrated circuits: With the continuous development of integrated circuit technology, the increasing demand for high-performance semiconductor materials. Gallium Nitride sputtering targets can be used to manufacture high-frequency, high-speed, high-power transistors and integrated circuits in the interconnect line, barrier layer and other structures, which helps to increase the operating speed of integrated circuits, reduce power consumption and improve the degree of integration, to meet the requirements of modern electronic equipment for high performance, miniaturization requirements of modern electronic devices.

Communication field: Gallium Nitride has important applications in the communication field due to its high electron mobility and high breakdown field strength. For example, in 5G communications, Gallium Nitride-based power amplifiers and RF devices can achieve higher power output and lower energy consumption, improving the performance and efficiency of communication systems.

Sensors: Gallium Nitride is sensitive to certain gases, biomolecules and other substances, and can be used to manufacture high-performance gas sensors and biosensors. Gallium Nitride film is deposited on the sensor substrate by sputtering technology. When the sensor comes into contact with the target substance, the electrical properties of the film will change, thus realizing the detection and monitoring of the target substance .