| Product ID | Formula | Purity | Dimension | Quantity | Price in € | Inquiry |
|---|---|---|---|---|---|---|
| 313300ST001 | GaAs | 99.999% | Ø 50.8 mm x 3.175 mm | 1 | POR | Inquire |
| 313300ST002 | GaAs | 99.999% | Ø 50.8 mm x 6.35 mm | 1 | POR | Inquire |
| 313300ST003 | GaAs | 99.999% | Ø 76.2 mm x 3.175 mm | 1 | POR | Inquire |
| 313300ST004 | GaAs | 99.999% | Ø 76.2 mm x 6.35 mm | 1 | POR | Inquire |
Gallium Arsenide sputtering target is a gallium (Ga) and arsenic (As) elements composed of key materials for sputtering coating process, in the semiconductor, optoelectronics and other high-tech fields have a wide range of applications, can be used to prepare high-performance electronic devices and optoelectronic devices.
Characteristics
Chemical formula: GaAs
Composition: Mainly composed of Gallium (Ga) and Arsenic (As) two elements, through a specific process to prepare into the form of a target suitable for sputtering.
Excellent electrical properties: GaAs has high electron mobility and saturation electron velocity, which makes the sputtering film made of it has good conductivity and high frequency characteristics in electronic devices, suitable for high frequency electronic devices, microwave devices and other fields.
Good optical properties: GaAs has good transmittance and luminescence properties in the infrared range, so it has important applications in the field of infrared detectors, lasers, solar cells and other optoelectronic devices.
Stable physical properties: GaAs has high hardness and melting point, relatively stable chemical properties, and is not easy to decompose and oxidize in the sputtering process, which can ensure the quality and stability of sputtered film.
Applications
Semiconductor field: in integrated circuit manufacturing, GaAs sputtering targets can be used to prepare electrodes, interconnect layers, insulating layers and other thin film structures of semiconductor devices. For example, in high-speed logic chips, radio frequency chips and other high-performance semiconductor devices, GaAs film can improve the speed and frequency performance of the device.
Optoelectronics field: used in the manufacture of infrared detectors, lasers, light-emitting diodes (LED) and other optoelectronic devices. In infrared detectors, gallium arsenide film can improve the sensitivity and response speed of the detector; in lasers, gallium arsenide is an important laser material, which can produce high-quality laser beams.
Solar cell field: GaAs solar cells have high conversion efficiency and radiation resistance, and have a wide range of application prospects in space solar cells, concentrating solar cells and other fields. Gallium arsenide sputtering target can be used to prepare solar cell absorption layer, window layer and other thin film structure, improve the performance of solar cells
VI HALBLEITERMATERIAL GmbH (VIMATERIAL) employs a stringent quality assurance system to ensure the reliability of our product quality. Strict quality control is implemented throughout the entire production chain, and for defective products, we strictly enforce the principle of rework and redo. Each batch is released only after passing detailed specification tests.
Every batch of our materials is independently tested, and, if necessary, we send samples to certified companies for testing. We provide these documents and analysis certificates with the shipment to certify that our products meet the required standards.
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