Catalogries

Chemical Name:
Barium tin oxide
Formula:
BaSnO3
Product No.:
565000
CAS No.:
12009-18-6
EINECS No.:
234-545-2
Form:
Sputtering Target
HazMat:
Class 6.1 / UN1564 / PG II

MSDS

TDS

Product ID Formula Purity Dimension Quantity Price in € Inquiry
565000ST001 BaSnO3 99.9% Ø 25.4 mm x 3.175 mm 1 POR Inquire
565000ST002 BaSnO3 99.9% Ø 50.8 mm x 3.175 mm 1 POR Inquire
565000ST003 BaSnO3 99.9% Ø 76.2 mm x 3.175 mm 1 POR Inquire
565000ST004 BaSnO3 99.9% Ø 76.2 mm x 6.35 mm 1 POR Inquire
Product ID
565000ST001
Formula
BaSnO3
Purity
99.9%
Dimension
Ø 25.4 mm x 3.175 mm
Quantity
1
Price in €
POR
Product ID
565000ST002
Formula
BaSnO3
Purity
99.9%
Dimension
Ø 50.8 mm x 3.175 mm
Quantity
1
Price in €
POR
Product ID
565000ST003
Formula
BaSnO3
Purity
99.9%
Dimension
Ø 76.2 mm x 3.175 mm
Quantity
1
Price in €
POR
Product ID
565000ST004
Formula
BaSnO3
Purity
99.9%
Dimension
Ø 76.2 mm x 6.35 mm
Quantity
1
Price in €
POR

BaSnO₃ target is an important inorganic material target.

Basic information:

Chemical formula: BaSnO₃, composed of three elements: barium (Ba), tin (Sn) and oxygen (O).
Molecular weight: 304.03.
Appearance: usually white solid target.
Density: about 7.6 g/cm³.
Crystal structure: It has a chalcogenide-type crystal structure. This crystal structure is characterised by octahedral structural units connected by co-angle tops, which brings unique physical and chemical properties to BaSnO₃.
High conductivity: It is a wide bandgap semiconductor material with high conductivity at room temperature, which makes it valuable for applications in semiconductor technology and electronic device manufacturing.

Fields of application:

Semiconductor field: Barium tin oxide can be used to prepare semiconductor devices such as thin film transistors and field effect transistors. Using its high conductivity and good semiconductor properties, the performance and stability of the device can be improved.

Optical field: Due to its good optical properties, Barium tin oxide can be used to prepare optical devices, such as transparent conductive films, lasers, and photodetectors.

Capacitor field: Because of its high dielectric constant, it can be used to prepare electrode materials or dielectric materials for capacitors. In capacitors, BaSnO₃ can improve the capacitor’s energy storage density and charging/discharging speed, so as to meet the demand for high-performance capacitors in electronic devices.

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QUALITY ASSURANCE

VI HALBLEITERMATERIAL GmbH (VIMATERIAL) employs a stringent quality assurance system to ensure the reliability of our product quality. Strict quality control is implemented throughout the entire production chain, and for defective products, we strictly enforce the principle of rework and redo. Each batch is released only after passing detailed specification tests.

Every batch of our materials is independently tested, and, if necessary, we send samples to certified companies for testing. We provide these documents and analysis certificates with the shipment to certify that our products meet the required standards.

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