Arsenic Telluride sputtering target is a material with the chemical formula As₂Te₃, which is used in the sputtering coating process to prepare thin films for electronic, optoelectronic, and semiconductor devices.
Properties
Chemical formula : As₂Te₃
Molecular weight: 532.64
CAS No.: 12044-54-1
Appearance: usually solid.
Density: 6.5 g/cm³.
Melting point: 621°C.
Application
Electronic devices: In the manufacture of semiconductor devices, it can be used to form specific semiconductor films as a component of electronic components, such as in some photodetectors and switches and other devices as the active layer, using its unique electrical properties to achieve specific functions.
Optoelectronic devices: Arsenic Telluride is used in the manufacture of thin films for optoelectronic devices, such as infrared detectors and sensors, which are able to effectively detect infrared radiation and play an important role in applications such as thermal imaging and night vision.
Photovoltaic field: Arsenic Telluride is one of the key materials in the manufacture of thin-film solar cells. As part of the semiconductor layer, it helps to efficiently convert sunlight into electricity, providing an effective way to utilize solar energy.
Thermoelectric materials: Arsenic Telluride can be used to prepare thermoelectric materials that convert temperature differences into voltage, which has potential applications in energy recovery and refrigeration, providing a new way of thinking about and solving energy problems.
Materials R&D: Researchers use arsenic telluride sputtering targets to explore new materials and processes in thin-film technology, providing strong support for the development of new semiconductor materials and devices by precisely controlling the thickness and composition of thin films.
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