Aluminum arsenide (AlAs) is a III-V compound semiconductor material containing two elements, aluminum and arsenic. AlAs crystals have a hexagonal system and belong to the sphalerite structure, and its band gap is about 1.42 electron volts.
AlAs materials have poor electrical conductivity at room temperature, but their electrical conductivity is greatly improved at high temperatures. In addition, AlAs has excellent chemical and thermal stability and can be used in device manufacturing in high temperature environments.
Color: orange.
Properties: crystal
Melting point (℃): 1740.
Density (kg/m3): 3760.
Aluminum arsenide is deliquescent.
As/H2 + Al —1100℃→ AlAs
Al + As —600℃→ AlAs
High-purity aluminum arsenide can be obtained by recrystallization in an argon atmosphere.
In microelectronics:
As a semiconductor material, AlAs has excellent properties that make it widely used in the field of microelectronics. Aluminum arsenide can be combined with other semiconductor materials such as gallium arsenide (GaAs) and gallium nitride (GaN) to prepare heterojunction chips, which have high-speed electron transport and excellent conductivity. At the same time, aluminum arsenide can also be used to prepare high-efficiency solar cells and magneto-optical modulators and other devices, with broad application prospects.
In optoelectronics:
As a semiconductor material, AlAs is also very important in the field of optoelectronics. AlAs can prepare high-quality quantum well structures, which have special quantum states and can be used to prepare devices such as infrared detectors and lasers. In addition, aluminum arsenide is also widely used in the microwave field, such as preparing microwave devices and microwave antennas.
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Every batch of our materials is independently tested, and, if necessary, we send samples to certified companies for testing. We provide these documents and analysis certificates with the shipment to certify that our products meet the required standards.
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